VS-VSK250PBF Datasheet, PDF (10/14 Pages) Vishay Siliconix – Standard Recovery Diodes

VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
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Vishay Semiconductors
2800
2400
2000
1600
1200
800
400
0
0
120°
(Rec t)
3 x VSK.320.. Series
Three Phase Bridge
Co nne c t e d
T_J= 150°C
0.004.0K3/KW/ ^W
0.05
0.06
K/ _W
K/ _W
0.08 _{K/ W}
0.12 _{K/ W}
0.2 _{K/ W}
0.3 _{K/ W}
0.6 _{K/ W}
200 400 600 800
Total Output Current (A)
10000 25 50 75 100 125 150
Maximum Allowable Ambient Temperature (°C)
Fig. 29 - Forward Power Loss Characteristics
10000
9000
8000
7000
At Any Ra ted Load Condition And With
Rated V_RRM App lied Following Surge.
Initial T_J = 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
6000
5000
4000
3000 ^{VSK.320.. Series}
Per Junc tion
2000
1
10
100
Numb er Of Equal Amplitude Half Cyc le Current Pulses (N)
Fig. 30 - Maximum Non-Repetitive Surge Current
10000
T_J= 25°C
1000
T_J= 150°C
VSK.320.. Series
Per Junc tion
100
0.5 1 1.5 2 2.5 3 3.5 4
Instantaneous Forward Voltage (V)
Fig. 32 - Forward Voltage Drop Characteristics
10000
9000
8000
7000
Ma ximum Non Rep etitive Surge Current
Versus Pulse Train Dura tion.
Initial T_J = 150°C
No Vo ltage Reap plied
Rated V_RRMReap plied
6000
5000
4000
3000
VSK.320.. Series
Per Junc tio n
2000
0.01
0.1
1
Pulse Train Dura tion (s)
Fig. 31 - Maximum Non-Repetitive Surge Current
1
Steady State Value:
R_thJC = 0.45 K/ W
(DC Operation)
0.1
0.01
VSK.320.. Series
Per Junction
0.001
0.001 0.01 0.1
1
10 100
Square Wave Pulse Duration (s)
Fig. 33 - Thermal Impedance Z_thJC Characteristics
Revision: 28-May-14
10
Document Number: 93581
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