VS-SD600N Datasheet, PDF (5/8 Pages) Vishay Siliconix – High surge current capabilities

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12000
10000
At Any Rated Load Condition And With
Rated V_RRM Applied Following Surge.
Initial T_J= 180°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
8000
6000
4000
SD600N/ RSeries
(400V to 2000V)
2000
1
10
100
Number Of Equal Amplitude Ha lf Cyc le Current Pulses (N)
Fig. 9 - Maximum Non-Repetitive Surge Current
14000
12000
10000
Maximum Non Repetitive Surge Current
VersusPulse Train Duration.
Initial T_J = 180 °C
No Voltage Reapplied
Rated V_RRMReapplied
8000
6000
4000 _{SD600N/ RSeries}
(400V to 2000V)
2000
0.01
0.1
1
Pulse Train Duration (s)
Fig. 10 - Maximum Non-Repetitive Surge Current
10000
8000
At Any Rated Load Condition And With
Rated V_RRM Applied Following Surge.
Initial T_J = 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
6000
VS-SD600N/R Series
Vishay Semiconductors
12000
10000
8000
Maximum Non Repetitive Surge Current
VersusPulse Train Duration.
Initial T_J= 150 °C
No Voltage Reapplied
Rated V_RRMReapplied
6000
4000
SD600N/ RSeries
(2500V to 3200V)
2000
0.01
0.1
1
Pulse Train Duration (s)
Fig. 12 - Maximum Non-Repetitive Surge Current
10000
T_J= 25°C
T_J= 180°C
1000
SD600N/ RSeries
(400V to 2000V)
100
0
1
2
3
4
InstantaneousForward Voltage (V)
Fig. 13 - Forward Voltage Drop Characteristics
10000
T_J= 25°C
T_J= 150°C
1000
4000
SD600N/ RSeries
(2500V to 3200V)
2000
1
10
100
Number Of Eq ual Amplitude Half Cycle Current Pulses (N)
Fig. 11 - Maximum Non-Repetitive Surge Current
SD600N/ RSeries
(2500V to 3200V)
100
0
1
2
3
4
5
InstantaneousForward Voltage (V)
Fig. 14 - Forward Voltage Drop Characteristics
Revision: 21-Jan-14
5
Document Number: 93551
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