VS-SD600N Datasheet, PDF (4/8 Pages) Vishay Siliconix – High surge current capabilities

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VS-SD600N/R Series
Vishay Semiconductors
1100
1000
900
800
700
600
DC
180°
120°
90°
60°
30°
500 ^RMSLimit
400
300
200
100
0
0
200
400
R
Conduction Period
0.04
K/
=
W
0.02
K/
W
0.08 _{K/ W}
- _Delta
R
0.1 _K/W
0.2 _{K/ W}
SD600N/ RSeries
(400V to 2000V)
T_J = 180°C
0.4 _{K/ W}
0.6 _{K/ W}
1 K/ _W
1.8 K/ _W
600 800 12000 40 60 80 100 120 140 160 180
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 6 - Forward Power Loss Characteristics
900
800
700
600
500
400
300
200
100
0
0
180°
120°
90°
60°
30°
R
RMSLimit
00..0064KK//WW=
0.1 _K/W
0.02
K/
W
-
Delta
R
0.2 _K/W
Conduction Angle
0.4 _{K/ W}
SD600N/ RSeries
(2500V to 3200V) 1 K/ _W
T_J = 150°C
100 200 300 400 500 62050 50
75 100 125 150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - Forward Power Loss Characteristics
1100
1000
900
800
700
600
500
DC
180°
120°
90°
60°
30°
RMS Limit
R
thSA ₌
00..0064KK//WW
0.1 _{K/ W}
0.02
K/
W
-
Delta
R
400
Conduction Period 0.2 _{K/ W}
300
SD600N/ RSeries ^0.4K/ _W
200
(2500V to 3200V)
100
T_J = 150°C
1 K/W
0
0 100 200 300 400 500 600 700 800 92050 50
75
100 125 150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - Forward Power Loss Characteristics
Revision: 21-Jan-14
4
Document Number: 93551
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