VS-SD600N Datasheet, PDF (2/8 Pages) Vishay Siliconix – High surge current capabilities

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VS-SD600N/R Series
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current 
at case temperature
I_F(AV)
180° conduction, half sine wave
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
Maximum I²t for fusing
Maximum I²ïƒ–t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
I_F(RMS)
I_FSM
I²t
I²ïƒ–t
V_F(TO)1
V_F(TO)2
r_f1
r_f2
V_FM
DC at T_C = 75 °C (04 to 20), T_C = 36 °C (25 to 32)
t = 10 ms _{No voltage}
t = 8.3 ms ^reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial T_J = T_J
maximum
t = 10 ms _{100 % VRRMï€} 
t = 8.3 ms ^reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x  x I_F(AV) < I <  x I_F(AV)),
T_J = T_J maximum
(I >  x I_F(AV)), T_J = T_J maximum
(16.7 % x  x I_F(AV) < I <  x I_F(AV)),
T_J = T_J maximum
(I >  x I_F(AV)), T_J = T_J maximum
I_pk = 1500 A, T_J = T_J maximum,
t_p = 10 ms sinusoidal wave
SD600N/R
04 to 20 22 to 32
600
92
54
570
375
100
940
13 000
10 500
13 600
11 000
10 900
8830
11 450
9250
845
551
772
503
598
390
546
356
8450
5510
0.78
0.84
0.87
0.88
0.35
0.40
0.31
0.38
1.31
1.44
UNITS
A
°C
A
°C
A
kA²s
kA²ïƒ–s
V
mW
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Maximum allowed 
mounting torque ± 10 %
Approximate weight
Case style
T_J
T_Stg
R_thJC
R_thCS
DC operation
Mounting surface, smooth, flat and greased
Not-lubricated threads
See dimensions (link at the end of datasheet)
SD600N/R
04 to 20 22 to 32
UNITS
- 40 to 180 - 40 to 150
°C
- 55 to 200
0.1
K/W
0.04
50
Nm
454
g
B-8
R_thJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
120°
0.012
0.014
0.008
0.014
90°
0.017
60°
0.025
30°
0.042
0.019
0.026
0.042
T_J = T_J maximum
K/W
Note
• The table above shows the increment of thermal resistance R_thJC when devices operate at different conduction angles than DC
Revision: 21-Jan-14
2
Document Number: 93551
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