VS-SD403CC Datasheet, PDF (5/8 Pages) Vishay Siliconix – High current capability

www.vishay.com
90
I _FM = 750 A
80
Squa re Pu lse
70
400 A
60
200 A
50
40
30
SD40 3C..S10C Series
20
T_J = 12 5 °C; V _r = 30V
10
10 20 30 40 50 60 70 80 90 100
Rate O f Fall O f Fo rw ard C urre nt - di/dt (A /µs)
Fig. 12 - Recovery Current Characteristics
VS-SD403C..C Series
Vishay Semiconductors
170
160
150
140
130
120
110
100
90
80
70
60
50
0
I_FM = 750 A
Sq uare Pulse
400 A
200 A
SD 4 0 3 C ..S1 5 C Se rie s
T_J = 1 2 5 ° C ; V r = 3 0 V
20 40 60 80 100
Rate O f Fall O f Fo rw ard C urre nt - d i/dt ( A/µs)
Fig. 14 - Recovery Charge Characteristics
3.5
S D 4 0 3 C ..S1 5 C S e rie s
T_J = 1 2 5 °C ; V _r = 3 0 V
3
I _FM = 750 A
Sq uare Pulse
2.5
400 A
2
200 A
1.5
10
10 0
Rate O f Fall O f Fo rw ard C urren t - di/d t (A/µs)
Fig. 13 - Recovery Time Characteristics
130
120
I _FM = 750 A
110
Squ are Pu lse
100
90
400 A
80
70
200 A
60
50
40
30
SD 4 0 3 C ..S1 5 C S e rie s
20
T_J = 1 2 5 °C ; V _r = 3 0 V
10
10 20 30 40 50 60 70 80 90 100
R ate O f Fa ll O f Forw ard C urre nt - di/dt ( A/µs)
Fig. 15 - Recovery Current Characteristics
1E 4
1E 3
1E 2
1E 1
1E 1
20 jo u le s p e r p ulse
10
24
1
0 .4
0.2
0 .1
0.04
0 .02
0 .01
2
1
0.4
0.2
0.1
20 jo ule s p er pulse
10
4
0.04
SD 40 3 C ..S1 0 C S e ri es
Si nu soi dal Pul se
tp
T_J = 1 2 5°C , V_RRM= 8 0 0 V
d v/ d t = 10 0 0V / µs
1E2
1E3
1E 4
P u lse B a se w id t h (µ s)
SD 403C..S10C Se rie s
Trape zoidal Pulse
tp
T_J = 1 2 5° C, VRRM= 8 0 0 V
d v/ dt = 1 0 0 0 V/ µs ; d i/ dt= 5 0 A / µs
1E1
1E2
1E3
1E4
P ulse B a se w id t h (µ s)
Fig. 16 - Maximum Total Energy Loss Per Pulse Characteristics
Revision: 15-Apr-14
5
Document Number: 93175
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000