VS-SD403CC Datasheet, PDF (2/8 Pages) Vishay Siliconix – High current capability

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VS-SD403C..C Series
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at heatsink temperature
Maximum RMS current
SYMBOL
I_F(AV)
I_F(RMS)
Maximum peak, one-cycle ,
non-repetitive forward current
I_FSM
Maximum I²t for fusing
I²t
Maximum I²âˆšt for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level of forward slope resistance
High level of forward slope resistance
Maximum forward voltage drop
I²âˆšt
V_F(TO)1
V_F(TO)2
r_f1
r_f2
V_FM
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms No voltage
t = 8.3 ms ^reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial T_J = T_J
maximum
t = 10 ms _{100 % VRRM}
t = 8.3 ms ^reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x I_F(AV) < I < π x I_F(AV)), T_J = T_J maximum
(I > π x I_F(AV)), T_J = T_J maximum
(16.7 % x π x I_F(AV) < I < π x I_F(AV)), T_J = T_J maximum
(I > π x I_F(AV)), T_J = T_J maximum
I_pk = 1350 A, T_J = 25 °C; t_p = 10 ms sinusoidal wave
VALUES
430 (210)
55 (75)
675
6180
6470
5200
5445
191
175
135
123
1910
1.00
1.20
0.56
0.70
1.83
UNITS
A
°C
A
kA²s
kA²âˆšs
V
mΩ
V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT T_J = 25 °C
TEST CONDITIONS
TYPICAL VALUES
AT T_J = 125 °C
CODE
I_pk
trr AT 25 % I_RRM
SQUARE
dI/dt
V_r
trr AT 25 % I_RRM
Q_rr
I_rr
(μs)
PULSE
(A/μs)
(V)
(μs)
(μC)
(A)
(A)
S10
1.0
S15
1.5
2.4
750
25
- 30
2.9
52
33
90
44
I_FM
t_rr
dir
t
dt
Q_rr
I_RM(REC)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
T_J
T_Stg
R_thJ-hs
DC operation single side cooled
DC operation double side cooled
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES
UNITS
- 40 to 125
°C
- 40 to 150
0.16
K/W
0.08
4900 (500)
N (kg)
70
g
DO-200AA
ΔR_thJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
SINGLE SIDE DOUBLE SIDE
180°
0.010
0.011
120°
0.012
0.013
RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE
0.008
0.008
0.013
0.013
TEST CONDITIONS
UNITS
90°
0.016
0.016
0.018
0.018
T_J = T_J maximum
K/W
60°
0.024
0.024
0.025
0.025
30°
0.042
0.042
0.042
0.042
Note
• The table above shows the increment of thermal resistance R_thJ-hs when devices operate at different conduction angles than DC
Revision: 15-Apr-14
2
Document Number: 93175
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