VS-SD403CC Datasheet, PDF (4/8 Pages) Vishay Siliconix – High current capability

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6 00 0
5 50 0
5 00 0
4 50 0
A t A n y R a t e d Lo a d C o n d it io n A n d W it h
R a t e d V _{RR M}A p p lie d Fo llo w in g S u rg e .
In it ia l T _J = 1 2 5° C
@ 60 H z 0.0 083 s
@ 50 H z 0.0 100 s
4 00 0
3 50 0
3 00 0
2 50 0 S D 403 C ..C S eries
2 00 0
1
10
1 00
Num be r O f Equ al A m plitud e Ha lf Cy c le C urre nt Pulse s (N )
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
70 0 0
60 0 0
50 0 0
Maxim um Non Rep etitive Surge Current
Versus Pulse Train D uration .
Initial T_J = 125°C
No Voltage Reapplied
Rated V_{RR M}Reapplied
40 0 0
30 0 0
20 0 0
SD 403C..C Series
10 0 0
0.01
0.1
1
Pulse Train Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
1 0 0 00
T_J = 25 °C
1000
T_J = 125 °C
1 00
SD 4 0 3 C ..C Se r ie s
10
0 12 34 5 67
In st an ta n e o us Fo rw ar d V o lta ge (V )
Fig. 9 - Forward Voltage Drop Characteristics
VS-SD403C..C Series
Vishay Semiconductors
1
SD 403 C..C Series
0 .1
S te a d y St a t e V a lu e
0.01
R _thJ-hs = 0.16 K /W
( S in g le Sid e C o o le d )
R _thJ-hs = 0.08 K /W
( D o ub le S id e C o o le d )
( D C O p e ra t io n )
0 .0 01
0.001 0.01 0.1
1
10
10 0
S q u a re W a ve P u lse D u ra tion (s)
Fig. 1 - Thermal Impedance Z_thJ-hs Characteristics
2.8
SD 4 0 3 C ..S1 0 C Se rie s
2.6
T_J = 1 2 5 ° C ; V _r = 3 0 V
I _FM = 750 A
2.4
Squa re Pulse
2.2
400 A
2
1.8
200 A
1.6
10
100
Rat e O f Fall O f Forw ard Current - d i/dt (A /µs)
Fig. 10 - Recovery Time Characteristics
14 0
13 0
12 0
11 0
10 0
90
80
70
60
50
40
30
20
10
0
I _FM = 750 A
Squa re Pulse
400 A
200 A
SD 4 0 3 C ..S1 0 C Se rie s
T_J = 1 2 5 ° C ; V _r = 3 0 V
20 40 60 80 100
R ate O f Fa ll O f Fo rw ard C urre nt - di/dt (A /µs)
Fig. 11 - Recovery Charge Characteristics
Revision: 15-Apr-14
4
Document Number: 93175
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