VS-HFA90FA120 Datasheet, PDF (5/6 Pages) Vishay Siliconix – Large creepage distance between terminal

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VS-HFA90FA120
Vishay Semiconductors
I_F
0
(3)
t_rr
t_a
t_b
(2) _IRRM
(4)
Q_rr
0.5 I_RRM
dI_(rec)M/dt ⁽⁵⁾
(1) ^dIF^/dt
0.75 I_RRM
(1) dI_F/dt - rate of change of current
through zero crossing
(4) Q_rr - area under curve defined by t_rr
and I_RRM
(2) I_RRM - peak reverse recovery current
Q_rr =
t_rr x I_RRM
2
(3) t_rr - reverse recovery time measured
from zero crossing point of negative
going I_F to point where a line passing
through 0.75 I_RRM and 0.50 I_RRM
extrapolated to zero current.
(5) dI_(rec)M/dt - peak rate of change of
current during t_b portion of t_rr
Fig. 11 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code VS- HF A 90 F A 120
1
2
3
4
5
6
7
1 - Vishay Semiconductors product
2 - HEXFRED^® family
3 - Process designator (A = electron irradiated)
4 - Average current (90 = 90 A)
5 - Circuit configuration (2 separate diodes, parallel pin-out)
6 - Package indicator (SOT-227 standard insulated base)
7 ^{- Voltage rating (120 = 1200 V)}
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
Lead Assignment
4
3
2 separate diodes,
parallel pin-out
F
4
3
1
2
1
2
Dimensions
Packaging information
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95423
www.vishay.com/doc?95425
Revision: 17-Oct-16
5
Document Number: 94690
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