VS-HFA90FA120 Datasheet, PDF (4/6 Pages) Vishay Siliconix – Large creepage distance between terminal

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VS-HFA90FA120
Vishay Semiconductors
200
125 °C
150
I_F = 40 A
V_R = 200 V
I_F = 20 A
100
25 °C
50
0
100
1000
dI_F/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI_F/dt
30
V_R = 200 V
1500
V_R = 200 V
1250
I_F = 40 A
1000
I_F = 20 A
750 125 °C
500
250
25 °C
0
100
1000
dI_F/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI_F/dt
I_F = 40 A
20
I_F = 20 A
10 ^{125 °C}
25 °C
0
100
1000
dI_F/dt (A/μs)
Fig. 9 - Typical Reverse Recovery Current vs. dI_F/dt
V_R = 200 V
L = 70 μH
0.01 Ω
D.U.T.
dI_F/dt
adjust
G
D
IRFP250
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
Revision: 17-Oct-16
4
Document Number: 94690
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