VS-HFA90FA120 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Large creepage distance between terminal

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VS-HFA90FA120
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
t_rr
I_RRM
Q_rr
I_F = 1.0 A, dI_F/dt = 200 A/μs, V_R = 30 V
-
T_J = 25 °C
-
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
-
I_F = 40 A
-
dI_F/dt = - 200 A/μs
V_R = 200 V
-
-
T_J = 125 °C
-
35
80
130
6.8
11.5
270
740
MAX.
-
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction to case, single leg conducting
Junction to case, both legs conducting
R_thJC
Case to heatsink
Weight
R_thCS
Flat, greased surface
Mounting torque
Torque to terminal
Torque to heatsink
Case style


MIN.
-
-
-
-
-
-
TYP.
MAX.
UNITS
-
0.48
-
0.24
°C/W
0.10
-
30
-
g
-
1.1 (9.7) Nm (lbf.in)
-
1.3 (11.5) Nm (lbf.in)
SOT-227
1000
100
T_J = 150 °C
10
T_J = 125 °C
T_J = 25 °C
1
0.5 1 1.5 2 2.5 3 3.5 4
V_F - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg)
10
T_J = 150 °C
1
0.1
T_J = 125 °C
0.01
0.001
T_J = 25 °C
0.0001
0
200 400 600 800 1000 1200
V_R - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 17-Oct-16
2
Document Number: 94690
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