VS-GB100TH120N Datasheet, PDF (5/7 Pages) Vishay Siliconix – Molding Type Module IGBT, 2-in-1 Package, 1200 V and 100 A

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8
V_CC = 600 V
7
I_C = 100 A
V_GE = - 15 V
6
T_J = 125 °C
5
4
E_REC
3
2
1
0
0
10
20
30
40
50 60
R_g (Ω)
Fig. 9 - Diode Switching Loss vs. R_g
VS-GB100TH120N
Vishay Semiconductors
10⁰
DIODE
10^-1
10^-2
10^-3
CIRCUIT CONFIGURATION
Dimensions
10^-2
10^-1
10⁰
10¹
t (s)
Fig. 10 - Diode Transient Thermal Impedance
6
7
1
2
3
5
4
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Revision: 10-Jun-15
5
Document Number: 94752
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