VS-GB100TH120N Datasheet, PDF (4/7 Pages) Vishay Siliconix – Molding Type Module IGBT, 2-in-1 Package, 1200 V and 100 A

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VS-GB100TH120N
Vishay Semiconductors
220
200
180
160
140
120
100
80
60
40
20
0
0
I_C, Module
R_g = 5.6 Ω
V_GE = ± 15 V
T_J = 125 °C
300
600
900
V_CE (V)
Fig. 5 - RBSOA
1200
1500
10⁰
IGBT
10^-1
10^-2
10^-3
10^-2
10^-1
10⁰
10¹
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
200
175
150
125
25 °C
100
125 °C
75
50
25
0
0 0.5
1 1.5
2
2.5
3
V_F (V)
Fig. 7 - Diode Typical Forward Characteristics
10
9
8
7
6
5
4
3
2
1
0
0
E_rec
V_CC = 600 V
R_g = 5.6 Ω
V_GE = - 15 V
T_J = 125 °C
50
100
150
200
I_F (A)
Fig. 8 - Diode Switching Loss vs. I_F
Revision: 10-Jun-15
4
Document Number: 94752
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