VS-GB100TH120N Datasheet, PDF (3/7 Pages) Vishay Siliconix – Molding Type Module IGBT, 2-in-1 Package, 1200 V and 100 A

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VS-GB100TH120N
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Operating junction temperature
T_J
Storage temperature range
T_STG
Junction to case
IGBT
Diode
R_thJC
Case to sink
R_thCS Conductive grease applied
Mounting torque
Power terminal screw: M6
Mounting screw: M6
Weight
MIN. TYP. MAX. UNITS
-
-
150
°C
-40
-
125
-
- 0.150
-
- 0.225 K/W
- 0.035 -
2.5 to 5.0
Nm
3.0 to 5.0
300
g
200
180
160
25 °C
140
120
100
125 °C
80
60
40
20
V_GE = 15 V
0
0 0.5 1 1.5 2 2.5 3 3.5
V_CE (V)
Fig. 1 - IGBT Typical Output Characteristics
200
175
V_CE = 20 V
150
125
100
75
50
125 °C
25 °C
25
0
5 6 7 8 9 10 11 12 13
V_GE (V)
Fig. 2 - IGBT Typical Transfer Characteristics
30
V_CC = 600 V
25 ^Rg ^{= 5.6 Ω}
V_GE = ± 15 V
20
T_J = 125 °C
15
E_off
10
E_on
5
0
0
50
100
150
200
I_C (A)
Fig. 3 - IGBT Switching Loss vs. I_C
40
35
V_CC = 600 V
I_C = 100 A
30
V_GE = ± 15 V
T_J = 125 °C
25
20
E_on
15
10
E_off
5
0
0
10
20
30
40 50 60
R_g (Ω)
Fig. 4 - IGBT Switching Loss vs. R_g
Revision: 10-Jun-15
3
Document Number: 94752
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