VS-FA72SA50LC_15 Datasheet, PDF (5/10 Pages) Vishay Siliconix – Power MOSFET, 72 A

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1
0.1 ^tf
t_d(off)
t_d(on)
VS-FA72SA50LC
Vishay Semiconductors
1
t_d(on)
t_d(off)
t_r
0.1
t_f
t_r
0.01
0
10 20 30 40 50 60 70
Drain-to-source current - I_ds (A)
Fig. 11 - Typical MOSFET Switching Time vs. I_DS, T_J = 125 °C,
V_DD = 250 V, V_GS = 10 V, L = 500 μH, R_G = 2.4 
Diode used: 60APH06
1
0.01
0 10
20 30 40
Rg (Ω)
50 60
Fig. 12 - Typical MOSFET Switching Time vs. R_g, T_J = 125 °C,
I_DS = 100 A, V_DD = 250 V, V_GS = 10 V, L = 500 μH
Diode used: 60APH06
0.1
0.01
0.001
0.00001
Notes:
0.75
0.50
0.25
0.1
0.05
0.02
DC
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Peak T_J = P_DM x Z_thJC + T_C
0.0001
0.001
0.01
0.1
1
t₁ - Rectangular Pulse Duration (s)
Fig. 13 - Maximum Thermal Impedance Z_thJC Characteristics, MOSFET
15 000
12 000
9000
V_GS = 0 V, f = 1 MHz
C_iss = C_gs + C_gd, C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
6000
C_oss
3000
0
1
C_rss
10
100
V_DS - Drain-to-Source Voltage (V)
Fig. 14 - Typical Capacitance vs. Drain-to-Source Voltage
20 _{ID = 57 A}
16
V_DS = 400 V
V_DS = 250 V
V_DS = 100 V
12
8
4
FOR TEST CIRCUIT
0
SEE FIGURE 19
0 60 120 180 240 300 360
Q_g - Total Gate Charge (nC)
Fig. 15 - Typical Gate Charge vs. Gate-to-Source Voltage
Revision: 13-Aug-13
5
Document Number: 94782
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