VS-FA72SA50LC_15 Datasheet, PDF (4/10 Pages) Vishay Siliconix – Power MOSFET, 72 A

www.vishay.com
100
90
V_GS = 7 V
V_GS = 8 V
80 V_GS = 10 V
70 ^VGS ^{= 12 V}
60 ^{VGS = 15 V}
50
40
30
V_GS = 6 V
20
V_GS = 5 V
10
0
0 2 4 6 8 10 12 14 16 18 20
V_DS - Drain-to-Source Voltage (V)
Fig. 5 - Typical Drain-to-Source Current Output Characteristics
at T_J = 150 °C
200
I_D = 60 A
180 _{VGS = 10 V}
160
140
120
100
80
60
40
0
20 40 60 80 100 120 140 160
T_J - Junction Temperature (°C)
Fig. 6 - Typical Drain-to-Source On-Resistance vs. Temperature
280
240
200
160
T_J = 150 °C
T_J = 25 °C
120
80
40
T_J = 125 °C
0
0.0
0.5
1.0
1.5
2.0
V_FSD - Drain-to-Source Forward Voltage Drop
Characteristics (V)
Fig. 7 - Typical Body Diode Forward Voltage Drop Characteristics
VS-FA72SA50LC
Vishay Semiconductors
140
120
100
80
60
T_J = 150 °C
T_J = 125 °C
40
20
T_J = 25 °C
0
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
V_GS - Gate-to-Source Voltage (V)
Fig. 8 - Typical MOSFET Transfer Characteristics
10
1
0.1
0.01
T_J = 150 °C
T_J = 125 °C
0.001
0.0001
T_J = 25 °C
0.00001
0
100 200 300 400 500 600
V_DS - Drain-to-Source Voltage (V)
Fig. 9 - Typical MOSFET Zero Gate Voltage Drain Current
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0.20
T_J = 25 °C
T_J = 125 °C
T_J = 150 °C
0.40
0.60
0.80
1.00
I_D (mA)
Fig. 10 - Typical MOSFET Threshold Voltage
Revision: 13-Aug-13
4
Document Number: 94782
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000