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VS-FA72SA50LC_15 Datasheet, PDF (3/10 Pages) Vishay Siliconix – Power MOSFET, 72 A
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VS-FA72SA50LC
Vishay Semiconductors
SOURCE-DRAIN RATINGS AND CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNITS
Continuous source current (body diode)
Pulsed source current (body diode)
IS
MOSFET symbol showing
D
-
-
72
ISM (1)
the integral reverse p-n
G
junction diode.
A
-
-
228
S
Diode forward voltage
VSD (2)
TJ = 25 °C, IS = 57 A, VGS = 0 V
TJ = 125 °C, IS = 57 A, VGS = 0 V
-
0.9 1.31
V
-
0.75
-
Reverse recovery time
Reverse recovery current
trr
-
660
-
ns
Irr
TJ = 25 °C, IF = 50 A, dIF/dt = 100 A/μs (2) -
46
-
A
Reverse recovery charge
Qrr
-
15
-
μC
Reverse recovery time
Reverse recovery current
trr
-
880
-
ns
Irr
TJ = 125 °C, IF = 50 A, dIF/dt = 100 A/μs (2) -
50
-
A
Reverse recovery charge
Qrr
-
23
-
μC
Forward turn-on time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD)
Notes
(1) Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
(2) Pulse width  300 μs, duty cycle  2 %
160
140
120
DC
100
80
60
40
20
0
0
20
40
60
80
100
IDS - Continuous Drain-Source Current (A)
Fig. 1 - Maximum DC MOSFET Drain-Source Current IDS (A)
180
VGS = 7 V
160 VGS = 8 V
140 VGS = 10 V
120
VGS = 12 V
VGS = 15 V
100
80
60
VGS = 6 V
40
VGS = 5 V
20
0
0 2 4 6 8 10 12 14 16 18 20
VDS - Drain-to-Source Voltage (V)
Fig. 3 - Typical Drain-to-Source Output Characteristics
at TJ = 25 °C
100
TJ = 125 °C
10 TJ = 25 °C
1
TJ = 150 °C
0.1
0.1
VGS = 10 V
1.0
10
VDS - Drain-to-Source Voltage (V)
Fig. 2 - Typical Drain-to-Source Output Characteristics
110
100
VGS = 7 V
VGS = 8 V
90 VGS = 10 V
80 VGS = 12 V
70 VGS = 15 V
60
50
40
30
VGS = 6 V
20
VGS = 5 V
10
0
0 2 4 6 8 10 12 14 16 18 20
VDS - Drain-to-Source Voltage (V)
Fig. 4 - Typical Drain-to-Source Current Output Characteristics
at TJ = 125 °C
Revision: 13-Aug-13
3
Document Number: 94782
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