VS-80EBU04 Datasheet, PDF (5/7 Pages) Vishay Siliconix – Ultrafast recovery time

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VS-80EBU04
Vishay Semiconductors
I_F
0
(3)
t_rr
t_a
t_b
(2) _IRRM
(4)
Q_rr
0.5 I_RRM
dI_(rec)M/dt ⁽⁵⁾
0.75 I_RRM
(1) ^dIF^/dt
(1) dI_F/dt - rate of change of current
through zero crossing
(2) I_RRM - peak reverse recovery current
(3) t_rr - reverse recovery time measured
from zero crossing point of negative
going I_F to point where a line passing
through 0.75 I_RRM and 0.50 I_RRM
extrapolated to zero current.
(4) Q_rr - area under curve defined by t_rr
and I_RRM
Q_rr =
t_rr x I_RRM
2
(5) dI_(rec)M/dt - peak rate of change of
current during t_b portion of t_rr
Fig. 10 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code VS- 80 E B U 04
1
2
3
4
5
6
1 - Vishay Semiconductors product
2 - Current rating (80 = 80 A)
3 - E = Single diode
4 - B = PowerTab^® (ultrafast/hyperfast only)
5 - U = Ultrafast recovery
6 - Voltage rating (04 = 400 V)
Dimensions
Part marking information
Application note
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95240
www.vishay.com/doc?95370
www.vishay.com/doc?95179
Revision: 09-Jun-15
5
Document Number: 93025
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