VS-80EBU04 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Ultrafast recovery time

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VS-80EBU04
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
t_rr
I_RRM
Q_rr
I_F = 1 A, dI_F/dt = 200 A/μs, V_R = 30 V
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
I_F = 80 A
V_R = 200 V
dI_F/dt = 200 A/μs
T_J = 125 °C
-
50
-
87
-
151
-
9.3
-
17.2
-
405
-
1300
MAX.
60
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Thermal resistance,
junction to case
R_thJC
Thermal resistance,
junction to heatsink
R_thCS
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style PowerTab^®
MIN.
-
-
-
-
1.2
(10)
TYP.
-
MAX.
0.70
0.2
-
-
5.02
0.18
-
2.4
-
(20)
80EBU04
UNITS
°C/W
g
oz.
N·m
(lbf · in)
1000
100
10
T_J = 175 ˚C
T_J = 125 ˚C
T_J = 25 ˚C
1
0
0.5
1.0
1.5
2.0
2.5
V_FM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1000
100
10
T_J = 175 ˚C
125 ˚C
1
25 ˚C
0.1
0.01
0.001
0
100
200
300
400
V_R - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 09-Jun-15
2
Document Number: 93025
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