VS-80EBU04 Datasheet, PDF (4/7 Pages) Vishay Siliconix – Ultrafast recovery time

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250
V_R = 200 V
T_J = 125 ˚C
T_J = 25 ˚C
200
150
III^FFF
=
=
=
160 A
80 A
40 A
100
50
100
1000
dI_F/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI_F/dt
VS-80EBU04
Vishay Semiconductors
4500
4000
3500
V_R = 200 V
T_J = 125 ˚C
T_J = 25 ˚C
3000
2500
2000
I_F = 160A
I_F = 80A
I_F = 40A
1500
1000
500
0
100
1000
dI_F/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI_F/dt
Note
(1) _{Formula used: TC = TJ - (Pd + PdREV) x RthJC;ï€} 
Pd = Forward power loss = I_F(AV) x V_FM at (I_F(AV)/D) (see fig. 6); 
Pd_REV = Inverse power loss = V_R1 x I_R (1 - D); I_R at V_R1 = 80 % rated V_R
V_R = 200 V
L = 70 μH
0.01 Ω
D.U.T.
dI_F/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
Revision: 09-Jun-15
4
Document Number: 93025
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