Si6820DQ Datasheet, PDF (5/5 Pages) Vishay Siliconix – N-Channel, Reduced Qg, MOSFET with Schottky Diode

Si6820DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Reverse Current vs. Junction Temperature
20
3
10
1
1
0.1
20 V
10 V
0.1
0.01
0.001
SCHOTTKY
Forward Voltage Drop
T_J = 150_C
T_J = 25_C
0.0001
0
25
50
75
100 125 150
T_J – Junction Temperature (_C)
0.01
0
Capacitance
250
0.1
0.2
0.3
0.4
0.5 0.6
V_F – Forward Voltage Drop (V)
200
150
C_iss
100
50
2
1
Duty Cycle = 0.5
0
0
4
8
12
16
20
V_KA – Reverse Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
10^–2
10^–1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 130_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
1
10
30
Document Number: 70790
S-56936—Rev. C, 23-Nov-98
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