 English |
|
|
|
|
|
|
|
| Si6820DQ Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel, Reduced Qg, MOSFET with Schottky Diode | |||
| |||
|
Si6820DQ
Vishay Siliconix
N-Channel, Reduced Qg, MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.160 @ VGS = 4.5 V
0.260 @ VGS = 3.0 V
ID (A)
"1.9
"1.5
SCHOTTKY PRODUCT SUMMARY
VKA (V)
20
VF (v)
Diode Forward Voltage
0.5 V @ 1 A
IF (A)
1.5
D
K
TSSOP-8
D1D
8K
G
S2
Si6820DQ
7A
S3
6A
G4
5A
Top View
S
A
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
VDS
VKA
VGS
20
20
"12
Continuous Drain Current (TJ = 150_C) (MOSFET)a, b
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)a, b
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)a, b
Maximum Power Dissipation (Schottky)a, b
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
IF
IFM
PD
TJ, Tstg
"1.9
"1.5
"8
1.0
1.5
30
1.2
0.76
1.0
0.64
â55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (t v 10 sec)a
Maximum Junction-to-Ambient (t = steady state)a
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
Document Number: 70790
S-56936âRev. C, 23-Nov-98
Device
MOSFET
Schottky
MOSFET
Schottky
Symbol
RthJA
Typical
115
130
Maximum
105
125
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
2-1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese