Si6820DQ Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel, Reduced Qg, MOSFET with Schottky Diode

Si6820DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
10
3V
8
V_GS = 5 thru 3,5 V
8
2.5 V
6
6
Transfer Characteristics
MOSFET
4
2V
2
1.5 V
0
0
2
4
6
8
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.20
4
T_C = 125_C
2
25_C
–55_C
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_GS – Gate-to-Source Voltage (V)
Capacitance
500
0.16
0.12
0.08
V_GS = 3.0 V
V_GS = 4.5 V
400
C_iss
300
C_oss
200
0.04
0
0
2
4
6
8
I_D – Drain Current (A)
Gate Charge
5
V_DS = 3.5 V
4
I_D = 0.3 A
3
2
1
100
C_rss
0
0
4
8
12
16
20
V_DS – Drain-to-Source Voltage (V)
2.0 ^{On-Resistance vs. Junction Temperature}
V_GS = 4.5 V
I_D = 1.9 A
1.6
1.2
0.8
0
0
0.5
1.0
1.5
2.0
2.5
Q_g – Total Gate Charge (nC)
Document Number: 70790
S-56936—Rev. C, 23-Nov-98
0.4
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
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