SUP75P03-07 Datasheet, PDF (5/6 Pages) Vishay Siliconix – P-Channel 30-V (D-S) 175 °C MOSFET

THERMAL RATINGS
90
75
60
45
30
15
SUP/SUB75P03-07
Vishay Siliconix
1000
100
10
1
Limited
by r_DS(on)*
T_C = 25 °C
Single Pulse
10 µs
100 µs
1 ms
10 ms
100 ms
DC
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (°C)
Maximum Avalanche and Drain Current
vs. Case Temperature
2
1 _{Duty Cycle = 0.5}
0.1
0.1
1
10
100
* V_GS
V_DS - Drain-to-Source Voltage (V)
minimum V_GS at which r_DS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^{- 4}
10^{- 3}
10^{- 2}
10^{- 1}
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71109.
Document Number: 71109
S-72688-Rev. D, 24-Dec-07
www.vishay.com
5