SUP75P03-07 Datasheet, PDF (4/6 Pages) Vishay Siliconix – P-Channel 30-V (D-S) 175 °C MOSFET

SUP/SUB75P03-07
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.8
V_GS = 10 V
1.5
I_D = 30 A
1.2
0.9
0.6
0.3
0
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
100
T_J = 150 °C
10
T_J = 25 °C
1
0
0.2
0.4
0.6
0.8
1.0
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1000
100
I_AV (A) at T_A = 25 °C
45
I_D = 250 µA
40
10
I_AV (A) at T_A = 150 °C
1
0.1
0.00001 0.0001 0.001
0.01
0.1
1
t_in (s)
Avalanche Current vs. Time
35
30
25
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Drain Source Breakdown
vs. Junction Temperature
www.vishay.com
4
Document Number: 71109
S-72688-Rev. D, 24-Dec-07