SUP75P03-07 Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 30-V (D-S) 175 °C MOSFET

SUP/SUB75P03-07
Vishay Siliconix
P-Channel 30-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
- 30
0.007 at V_GS = - 10 V
0.010 at V_GS = - 4.5 V
I_D (A)^a
± 75
± 75
TO-220AB
TO-263
Available
RoHS*
COMPLIANT
DRAIN connected to TAB
G DS
Top View
SUB75P03-07
GD S
Top View
SUP75P03-07
Ordering Information: SUB75P03-07 (TO-263)
SUB75P03-07-E3 (TO-263, Lead (Pb)-free)
SUP75P03-07 (TO-220AB)
SUP75P03-07-E3 (TO-220AB, Lead (Pb)-free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
Parameter
Symbol
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 175 °C)
T_C = 25 °C
T_C = 125 °C
I_D
Pulsed Drain Current
I_DM
Avalanche Current
I_AR
Repetitive Avalanche Energy^b
L = 0.1 mH
E_AR
Power Dissipation
T_C = 25 °C (TO-220AB and TO-263)
T_A = 25 °C (TO-263)^c
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
Limit
± 20
- 75^a
- 65
- 240
- 60
180
187^d
3.75
- 55 to 175
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
PCB Mount (TO-263)^c
Free Air (TO-220AB)
Junction-to-Case
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. When Mounted on 1" square PCB (FR-4 material).
d. See SOA curve for voltage derating.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71109
S-72688-Rev. D, 24-Dec-07
Symbol
R_thJA
R_thJC
Limit
40
62.5
0.8
Unit
°C/W
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