SUP53P06-20 Datasheet, PDF (5/6 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET

New Product
SUP53P06-20
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.8
60
50
0.5
I_D = 250 µA
40
I_D = 1 mA
0.2
30
20
- 0.1
10
- 0.4
- 50 - 25
140
0 25 50 75 100 125 150
T_J - Temperature(°C)
Threshold Voltage
120
100
80
60
40
20
0
0
25
50
75
100 125 150
T_J - Temperature (°C)
Power Derating, Junction-to-Case
1
Duty Cycle = 0.5
0
0
25
50
75
100 125 150
1000
T_C - Case Temperature (°C)
Max. Drain Current vs. Case Temperature
Limited by R_DS(on)*
100
10 µs
100 µs
10
1 ms
10 ms
100 ms, DC
1
T_C = 25 °C
Single Pulse
BVDSS
Limited
0.1
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^-4
10^-3
10^-2
10^-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68633.
Document Number: 68633
S-80897-Rev. A, 21-Apr-08
www.vishay.com
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