SUP53P06-20 Datasheet, PDF (4/6 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET

SUP53P06-20
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
I_D = 55 A
8
2.0
I_D = 20 A
1.7
V_DS = 20 V
6
1.4
V_DS = 30 V
4
1.1
V_GS = 10 V
V_GS = 4.5 V
2
0.8
0
0
100
20
40
60
80
Q_g - Total Gate Charge (nC)
Gate Charge
0.5
- 50 - 25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
0.10
I_D = 20 A
0.08
T_J = 150 °C
T_J = 25 °C
10
1
0.0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1000
100
10
I_AV (A) at T_J = 25 °C
1
I_AV (A) at T_J = 150 °C
0.1
0.0001
0.001
0.01
0.1
1
T_in - (s)
Single Pulse Avalanche Current Capability
vs. Time
0.06
0.04
T_J = 150 °C
0.02
T_J = 25 °C
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
75
I_D = 10 mA
72
69
66
63
60
- 50 - 25 0 25 50 75 100 125 150
T_J - Temperature (°C)
Drain-Source Breakdown Voltage vs. Junction
Temperature
www.vishay.com
4
Document Number: 68633
S-80897-Rev. A, 21-Apr-08