SUP53P06-20 Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET

New Product
P-Channel 60-V (D-S) MOSFET
SUP53P06-20
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
- 60
0.0195 at V_GS = - 10 V
0.025 at V_GS = - 4.5 V
TO-220AB
I_D (A)^a
- 53
- 42
Q_g (Typ.)
76 nC
FEATURES
• TrenchFET^® Power MOSFET
• 100 % UIS Tested
APPLICATIONS
• Load Switch
S
RoHS
COMPLIANT
G
DRAIN connected to TAB
GD S
Top View
Ordering Information: SUP53P06-20-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current
I_DM
Avalanche Current Pulse
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
E_AS
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
D
P-Channel MOSFET
Limit
- 60
± 20
- 53^a
- 46.8
9.2^b
- 8.1^b
- 150
- 45
101
69^a
2.1^b
104.2^a
66.7^a
3.1^b
2.0^b
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^b
Maximum Junction-to-Case
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
Steady State
Steady State
Symbol
R_thJA
R_thJC
Typical
33
0.98
Maximum
40
1.2
Unit
V
A
mJ
A
W
°C
Unit
°C/W
Document Number: 68633
S-80897-Rev. A, 21-Apr-08
www.vishay.com
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