SUP50N03-5M1P Datasheet, PDF (5/7 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

SUP50N03-5m1P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
1000
T_J = 150 °C
T_J = 25 °C
10
Limited by R_DS(on)*
100
10
1
100 μA
1 ms
10 ms
100 ms
1 s, 10 s, DC
1
10^-6
10^-5
10^-4
10^-3
10^-2
10^-1
Time (s)
Single Pulse Avalanche Current Capability vs. Time
1
Duty Cycle = 0.5
0.1
T_C = 25 °C
Single Pulse
BVDSS
Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
0.2
0.1
0.05
0.02
Single Pulse
0.1
10^-4
10^-3
10^-2
10^-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66570.
Document Number: 66570
S10-1050-Rev. A, 03-May-10
www.vishay.com
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