SUP50N03-5M1P Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
V_GS = 10 V thru 4 V
80
V_GS = 3 V
60
40
0.007
0.006
0.005
0.004
20
SUP50N03-5m1P
Vishay Siliconix
V_GS = 4.5 V
V_GS = 10 V
0
0.0
0.5
1.0
1.5
2.0
V_DS - Drain-to-Source Voltage (V)
Drain to Source Voltage vs. I_D
5
0.003
0
0.015
20
40
60
80
100
I_D - Drain Current (A)
On-Resistance vs. Drain Current
4
0.012
3
T_C = 25 °C
2
1
0
0.0
180
T_C = 125 °C
0.6
1.2
1.8
T_C = - 55 °C
2.4
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
135
T_C = - 55 °C
90
T_C = 25 °C
T_C = 125 °C
45
0.009
0.006
0.003
T_J = 150 °C
T_J = 25 °C
0.000
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
10
I_D = 20 A
8
V_DS = 15 V
6
V_DS = 8 V
V_DS = 24 V
4
2
0
0
6
12
18
24
30
I_D - Drain Current (A)
Transconductance
Document Number: 66570
S10-1050-Rev. A, 03-May-10
0
0
10
20
30
40
50
Q_g - Total Gate Charge (nC)
Gate Charge
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