SUP50N03-5M1P Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

SUP50N03-5m1P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
2.1
T_J = 150 °C
10
T_J = 25 °C
1
1.7
I_D = 250 μA
1.3
0.9
0.1
0.0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
3750
3000
C_iss
2250
1500
C_oss
750
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.0
I_D = 20 A
1.7
V_GS = 10 V
1.4
V_GS = 4.5 V
1.1
0.8
0.5
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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4
0.5
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
43
41
I_D = 250 μA
39
37
35
33
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
100
80
60
Package Limited
40
20
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating
Document Number: 66570
S10-1050-Rev. A, 03-May-10