SUM110P08-11 Datasheet, PDF (5/6 Pages) Vishay Siliconix – P-Channel 80-V (D-S) MOSFET

New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
120
90 ^{Package Limited}
60
1000
100
10
30
1
SUM110P08-11
Vishay Siliconix
0
0
25 50 75 100 125 150 175
T_C - (°C)
Max Avalanche and Drain Current
vs. Case Temperature
1
0.5
0.2
0.1
0.1
0.05
0.02
Single
0.1
0.00001 0.0001 0.001
0.01
0.1
1.0
tin - (Sec)
Avalanche Current vs. Time
0.01
0.0001
0.001
0.01
0.1
1
Normalized Thermal Transient Impedance, Junction-to-Case
*The power dissipation P_D is based on T_J(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi-
pation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?73472.
Document Number: 73472
S-70309-Rev. B, 12-Feb-07
www.vishay.com
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