SUM110P08-11 Datasheet, PDF (4/6 Pages) Vishay Siliconix – P-Channel 80-V (D-S) MOSFET

SUM110P08-11
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.05
0.04
T_J = 150 °C
10
25 °C
0.03
150 °C
0.02
1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - (V)
Source-Drain Diode Forward Voltage
1.1
I_D = 1 mA
0.8
0.5
0.2
- 0.1
- 0.4
- 50 - 25 0
25 50 75 100 125 150 175
T_J - (°C)
Threshold Voltage
400
350
300
250
200
150
100
50
0
25
50
75
100 125 150 175
T_C
Power Derating (Junction-to-Case)
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4
0.01
25 °C
0.00
0
2
4
6
8
10
V_GS - (V)
On-Resistance vs. Gate-to-Source Voltage
6000
5000
4000
3000
2000
1000
0
0.0001
0.001
0.01
0.10
1
Time (sec)
Single Pulse Power, Junction-to-Case (T_C = 25 °C)
1000
*Limited by r_DS(on)
10 µs
100
100 µs
1 ms
10
10 ms
100 ms, DC
1
Single pulse
T_C = 25 °C
0.1
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
*V_GS > minimum V_GS at which r_DS(on) is specified
Safe Operating Area
Document Number: 73472
S-70309-Rev. B, 12-Feb-07