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SUM110P08-11 Datasheet, PDF (3/6 Pages) Vishay Siliconix – P-Channel 80-V (D-S) MOSFET
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
200
40
180
VGS = 10 V thru 6V
160
30
140
120
100
20
80
60
10
40
4V
20
0
0
1
2
3
0
VDS - (V)
Output Characteristics
0.020
15000
SUM110P08-11
Vishay Siliconix
25 °C
TC = 125 °C
- 55 °C
1
2
3
4
5
VGS - (V)
Transfer Characteristics
0.016
0.012
0.008
0.004
VGS = 6 V
VGS = 10 V
12000
Ciss
9000
6000
Coss
3000
Crss
0.000
0
20
40
60
80
100
ID - (A)
On-Resistance vs. Drain Current
10.0
8.0
VDS = 40 V
6.0
0
0
20
40
60
80
VDS - (V)
Capacitance
2.5
ID = 20 A
2.1
VGS = 10 V
1.7
4.0
VDS = 64 V
1.3
2.0
0.9
0.0
0.0
40.0
80.0
120.0 160.0 200.0
Qg - (nC)
Gate Charge
Document Number: 73472
S-70309-Rev. B, 12-Feb-07
0.5
- 50 - 25 0 25 50 75 100 125 150 175
TJ - (°C)
On-Resistance vs. Junction Temperature
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