SUM110P06-07L_08 Datasheet, PDF (5/6 Pages) Vishay Siliconix – P-Channel 60-V (D-S) 175 °C MOSFET

SUM110P06-07L
Vishay Siliconix
THERMAL RATINGS
200
150
Package Limited
1000
Limited by r_DS(on)*
100
10 µs
100 µs
100
10
1 ms
10 ms
100 ms, DC
50
1
T_C = 25 °C
Single Pulse
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (°C)
Maximum Avalanche and Drain Current
vs. Case Temperature
1
Duty Cycle = 0.5
0.1
0.1
* V_GS
1
10
100
V_DS - Drain-to-Source Voltage (V)
minimum V_GS at which r_DS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^-4
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 62.5 °C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^-3
10^-2
10^-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72439.
Document Number: 72439
S-80274-Rev. C, 11-Feb-08
www.vishay.com
5