SUM110P06-07L_08 Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 60-V (D-S) 175 °C MOSFET

SUM110P06-07L
Vishay Siliconix
P-Channel 60-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
- 60
0.0069 at V_GS = - 10 V
0.0088 at V_GS = - 4.5 V
I_D (A)^d
- 110
- 110
FEATURES
• TrenchFET^® Power MOSFET
• Package with Low Thermal Resistance
Available
RoHS*
COMPLIANT
TO-263
S
G
G DS
Top View
Ordering Information: SUM110P06-07L
SUM110P06-07L-E3 (Lead (Pb)-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 60
V
V_GS
± 20
Continuous Drain Current^d
(T_J = 175 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 125 °C
I_D
- 110
- 95
A
I_DM
- 240
Avalanche Current
Single Pulse Avalanche Energy^a
L = 0.1 mH
I_AS
- 75
E_AS
281
mJ
Power Dissipation
T_C = 25 °C
375^c
T_A = 25 °C^b
P_D
3.75
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
Notes:
a. Duty cycle ≤ 1 %.
b. When Mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Limited by package.
PCB Mount^b
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72439
S-80274-Rev. C, 11-Feb-08
Symbol
R_thJA
R_thJC
Typical
40
0.4
Unit
°C/W
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