SUM110P06-07L_08 Datasheet, PDF (3/6 Pages) Vishay Siliconix – P-Channel 60-V (D-S) 175 °C MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
200
200
V_GS = 10 thru 5 V
160
160
4V
120
120
SUM110P06-07L
Vishay Siliconix
80
40
0
0
250
200
150
100
3V
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
T_C = - 55 °C
25 °C
125 °C
50
0
0
15
30
45
60
75
90
I_D - Drain Current (A)
Transconductance
14000
12000
C_iss
10000
8000
6000
4000
2000
C_oss
C_rss
0
0
10
20
30
40
50
60
V_DS - Drain-to-Source Voltage (V)
Capacitance
80
40
0
0
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.000
0
T_C = 125 °C
25 °C
- 55 °C
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
V_GS = 4.5 V
V_GS = 10 V
20
40
60
80
100 120
I_D - Drain Current (A)
On-Resistance vs. Drain Current
20
16
V_DS = 30 V
I_D = 110 A
12
8
4
0
0 50 100 150 200 250 300 350 400 450
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 72439
S-80274-Rev. C, 11-Feb-08
www.vishay.com
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