SUD50P04-08 Datasheet, PDF (5/9 Pages) Vishay Siliconix – P-Channel 40-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
1000
Limited by R_DS(on)*
100
T_J = 150 °C
T_J = 25 °C
10
10
1
SUD50P04-08
Vishay Siliconix
100 µA
1 ms
10 ms, 100 ms
1 s, 10 s, DC
1
10^-5
10^-4
10^-3
10^-2
10^-1
Time (s)
Single Pulse Avalanche Current Capability vs. Time
1
Duty Cycle = 0.5
0.1
T_C = 25 °C
Single Pulse
BVDSS
Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^-4
10^-3
10^-2
10^-1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65594.
Document Number: 65594
S10-0034-Rev. A, 11-Jan-10
www.vishay.com
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