SUD50P04-08 Datasheet, PDF (4/9 Pages) Vishay Siliconix – P-Channel 40-V (D-S) MOSFET

SUD50P04-08
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
- 1.0
T_J = 150 °C
10
- 1.3
- 1.6
I_D = 250 µA
T_J = 25 °C
- 1.9
1
- 2.2
0.1
0.0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
8000
6000
C_iss
- 2.5
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
- 43
I_D = 250 µA
- 45
4000
- 47
2000
C_oss
C_rss
0
0
10
20
30
40
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.0
I_D = 20 A
1.7
1.4
V_GS = 10 V
V_GS = 4.5 V
1.1
0.8
0.5
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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4
- 49
- 51
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
80
60
Package Limited
40
20
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating
Document Number: 65594
S10-0034-Rev. A, 11-Jan-10