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SUD50P04-08 Datasheet, PDF (3/9 Pages) Vishay Siliconix – P-Channel 40-V (D-S) MOSFET
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
VGS = 10 V thru 5 V
80
VGS = 4 V
0.015
0.012
60
0.009
40
20
0
0.0
VGS = 3 V
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.006
0.003
0
10
0.030
SUD50P04-08
Vishay Siliconix
VGS = 4.5 V
VGS = 10 V
20
40
60
80
100
ID - Drain Current (A)
On-Resistance vs. Drain Current
8
0.024
6
4
2
0
0
100
TC = 25 °C
TC = 125 °C
1
2
TC = - 55 °C
3
4
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
TC = - 55 °C
75
TC = 25 °C
50
TC = 125 °C
25
0.018
0.012
0.006
TJ = 150 °C
TJ = 25 °C
0.000
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
10
ID = 20 A
8
VDS = 20 V
6
VDS = 10 V
VDS = 32 V
4
2
0
0
10
20
30
40
50
ID - Drain Current (A)
Transconductance
Document Number: 65594
S10-0034-Rev. A, 11-Jan-10
0
0
30
60
90
120
Qg - Total Gate Charge (nC)
Gate Charge
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3