SUD50N04-37P Datasheet, PDF (5/7 Pages) Vishay Siliconix – N-Channel 40-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
7
SUD50N04-37P
Vishay Siliconix
Limited by r_DS(on)*
10
100 µs
1
1 ms
10 ms
100 ms, DC
0.1
T_C = 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which r_DS(on) is specified
Safe Operating Area, Junction-to-Case
15
5
4
3
1
0
0
25
50
75
100 125 150
T_A - Ambient Temperature (°C)
Current Derating*, Junction-to-Ambient
2.5
12
2.0
9
Package Limited
1.5
6
1.0
3
0.5
0
0
15
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*, Junction-to-Case
0.0
0
25
50
75
100 125 150
T_A - Ambient Temperature (°C)
Power Derating*, Junction-to-Ambient
12
9
6
3
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power Derating*, Junction-to-Case
Document Number: 69732
S-80109-Rev. B, 21-Jan-08
* The power dissipation P_D is based on T_J(max) = 175 °C, using
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.
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