SUD50N04-37P Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 40-V (D-S) MOSFET

New Product
N-Channel 40-V (D-S) MOSFET
SUD50N04-37P
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
40
0.037 at V_GS = 10 V
0.046 at V_GS = 4.5 V
I_D (A)^a
8
8
Q_g (Typ.)
5.3 nC
FEATURES
• TrenchFET^® Power MOSFET
• 100 % UIS Tested
APPLICATIONS
• Backlight Inverter for LCD Display
• Full Bridge DC/DC Converter
TO-252
D
RoHS
COMPLIANT
Drain Connected to Tab
GDS
Top View
Ordering Information:
SUD50N04-37P-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
40
V
V_GS
± 20
T_C = 25 °C
8^a
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
8^a
5.4^b
Pulsed Drain Current
T_A = 70 °C
4.4^b
A
I_DM
30
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
8^a
1.6^b
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
I_AS
7
E_AS
2.45
mJ
T_C = 25 °C
10.8
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
6.9
2.0^b
W
T_A = 70 °C
1.3^b
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^b
Maximum Junction-to-Case
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
Steady State
Steady State
Document Number: 69732
S-80109-Rev. B, 21-Jan-08
Symbol
R_thJA
R_thJC
Typical
49
9.4
Maximum
60
11.5
Unit
°C/W
www.vishay.com
1