SUD50N04-37P Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 40-V (D-S) MOSFET

SUD50N04-37P
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.20
T_J = 150 °C
10
0.16
T_J = 25 °C
1
0.12
I_D = 5 A
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.2
I_D = 250 µA
0.0 ^ID ^{= 5 mA}
- 0.2
- 0.4
- 0.6
- 0.8
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
0.08
T_A = 125 °C
0.04
T_A = 25 °C
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
80
60
40
20
0
0.0001 0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
80
60
40
20
0
0.0001
0.001
0.01
0.1
1
Time (s)
Single Pulse Power, Junction-to-Case
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4
Limited by r_DS(on)*
10
100 µs
1
1 ms
10 ms
100 ms
0.1
10 s
0.01
0.01
T_A = 25 °C
Single Pulse
0.1
1
DC
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which r_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 69732
S-80109-Rev. B, 21-Jan-08