SUD50N04-06H Datasheet, PDF (5/5 Pages) Vishay Siliconix – N-Channel 40-V (D-S), 175℃ MOSFET

SUD50N04-06H
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current vs.
Case Temperature
125
100
75
50
Limited By Package
25
1000
100
Safe Operating Area
*Limited
by r_DS(on)
10
1
T_C = 25_C
Single Pulse
10 ms
100 ms
1 ms
10 ms
dc, 100 ms
0
0
2
25 50 75 100 125 150 175
T_C − Case Temperature (_C)
0.1
0.1
1
10
100
V_DS − Drain-to-Source Voltage (V)
*V_GS u minimum V_GS at which r_DS(on) is specified
Normalized Thermal Transient Impedance, Junction-to-Case
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10^−4
10^−3
10^−2
10^−1
1
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?72860.
Document Number: 72860
S-42058—Rev. B, 15-Nov-04
www.vishay.com
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