SUD50N04-06H Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 40-V (D-S), 175℃ MOSFET

SUD50N04-06H
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
100
100
V_GS = 10 thru 7 V
80
6V
80
Transfer Characteristics
60
60
40
20
0
0
160
120
80
5V
2
4
6
8
10
V_DS − Drain-to-Source Voltage (V)
Transconductance
T_C = −55_C
25_C
125_C
40
40
20
0
0
0.010
T_C = 125_C
25_C
−55_C
1
2
3
4
5
6
7
V_GS − Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.008
0.006
V_GS = 10 V
0.004
0.002
0
0
8400
6300
10
20
30
40
50
60
V_GS − Gate-to-Source Voltage (V)
Capacitance
C_iss
4200
2100
C_oss
0 ^Crss
05
10 15 20 25 30 35 40
V_DS − Drain-to-Source Voltage (V)
0.000
0
20
20
40
60
80
100
I_D − Drain Current (A)
Gate Charge
16
V_DS = 20 V
I_D = 50 A
12
8
4
0
0 25 50 75 100 125 150 175 200
Q_g − Total Gate Charge (nC)
Document Number: 72860
S-42058—Rev. B, 15-Nov-04
www.vishay.com
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