SUD50N04-06H Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 40-V (D-S), 175℃ MOSFET

SUD50N04-06H
Vishay Siliconix
N-Channel 40-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V_(BR)DSS (V)
40
r_DS(on) (W)
0.006 @ V_GS = 10 V
I_D (A)^c
109
Q_g (Typ)
95
TO-252
FEATURES
D TrenchFETr Power MOSFETS
D 175_C Junction Temperature
D High Threshold Voltage At High Temperature
APPLICATIONS
D Automotive Such As:
− High-Side Switch
− Motor Drives
− 12-V Battery
D
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50N04-06H—E3
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 175_C)
Pulsed Drain Current
Avalanche Current (Single Pulse)
Repetitive Avalanche Energy (Single Pulse)^a
Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 100_C
L = 0.1 mH
T_C = 25_C
V_DS
V_GS
I_D
I_DM
I_AS
E_AS
P_D
T_J, T_stg
40
"20
109^c
77^c
100
50
125
136
−55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Junction-to-Ambient^b
t v 10 sec
Steady State
R_thJA
Junction-to-Case
R_thJC
Notes:
a. Duty cycle v 1%.
b. Surface mounted on 1” FR4 board.
c. Based on maximum allowable Junction Temperature. Package limitation current is 50 A.
Document Number: 72860
S-42058—Rev. B, 15-Nov-04
Typical
15
40
0.85
Maximum
18
50
1.1
Unit
_C/W
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