SIJH440E Datasheet, PDF (5/7 Pages) Vishay Siliconix – N-Channel 40 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
400
10000
320
1000
240
160
Package limited
100
80
0
10
0
25 50 75 100 125 150
T_C - Case Temperature (°C)
2nd line
Current Derating ^a
SiJH440E
Vishay Siliconix
Axis Title
200
10000
Axis Title
3.0
10000
160
2.4
1000
1000
120
1.8
80
1.2
100
100
40
0.6
0
10
0
25 50 75 100 125 150
T_C - Case Temperature (°C)
2nd line
Power, Junction-to-Case
0
10
0
25 50 75 100 125 150
T_A - Ambient Temperature (°C)
2nd line
Power, Junction-to-Ambient
Note
a. The power dissipation P_D is based on T_J max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-2149-Rev. A, 17-Oct-16
5
Document Number: 76206
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000