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SIJH440E Datasheet, PDF (2/7 Pages) Vishay Siliconix – N-Channel 40 V (D-S) 175 °C MOSFET
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SiJH440E
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage
VDS temperature coefficient
VGS(th) temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance a
Dynamic b
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
ID = 10 mA
ID = 250 μA
VDS = VGS, ID =250 μA
VDS = 0 V, VGS = +20 / -16 V
VDS = 40 V, VGS =0 V
VDS = 40 V, VGS = 0 V, TJ = 70 °C
VDS  10 V, VGS =10 V
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 20 A
40
-
-
V
-
24
-
mV/°C
-
-6.6
-
1
-
2.3
V
-
-
100
nA
-
-
1
μA
-
-
15
60
-
-
A
-
0.00080 0.00096

-
0.00096 0.00115
-
140
-
S
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = 20 V, VGS = 0 V, f = 1 MHz
VDS = 20 V, VGS = 10 V, ID = 20 A
VDS = 20 V, VGS = 4.5 V, ID =20 A
f = 1 MHz
VDD = 20 V, RL = 10 , ID  20 A,
VGEN = 10 V, Rg = 1 
VDD = 20 V, RL = 1 , ID  20 A,
VGEN = 4.5 V, Rg = 1 
-
20 330
-
-
2920
-
pF
-
820
-
-
279
420
-
127
195
nC
-
64
-
-
24.5
-
0.5
1.7
3.0

-
28
56
-
35
70
-
105
210
-
30
60
ns
-
140
280
-
290
580
-
78
156
-
53
106
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
IS
TC = 25 °C
-
-
160
A
ISM
-
-
300
VSD
IS = 5 A, VGS = 0 V
-
0.68
1.1
V
trr
-
92
184
ns
Qrr
ta
-
IF = 20 A, dI/dt = 100 A/μs, TJ = 25 °C
-
245
490
nC
54
-
ns
tb
-
38
-
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-2149-Rev. A, 17-Oct-16
2
Document Number: 76206
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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