SIA433EDJ Datasheet, PDF (5/9 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
20
25
15
20
15
10
Package Limited
10
5
5
0
0
0
25
50
75
100 125 150
25
T_C - Case Temperature (°C)
Current Derating*
SiA433EDJ
Vishay Siliconix
50
75
100
125
150
T_C - Case Temperature (°C)
Power Derating
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65472
S09-2114-Rev. A, 12-Oct-09
www.vishay.com
5