SIA433EDJ Datasheet, PDF (3/9 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

New Product
SiA433EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0
10^-2
10^-3
0.8
10^-4
0.6
10^-5
0.4
10^-6
T_J = 25 °C
10^-7
0.2
10^-8
0.0
0
3
6
9
12
15
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
10^-9
0
50
10
V_GS = 5 V thru 3 V
40
V_GS = 2.5 V
8
T_J = 150 °C
T_J = 25 °C
3
6
9
12
15
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
30
6
20
V_GS = 2 V
10
0
0.0
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0
V_GS = 1.5 V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
V_GS = 1.8 V
V_GS = 2.5 V
V_GS = 4.5 V
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current
4
T_C = 25 °C
2
T_C = 125 °C
0
T_C = - 55 °C
0.0
0.5
1.0
1.5
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
10
I_D = 11 A
8
V_DS = 10 V
6
V_DS = 5 V
4
V_DS = 16 V
2
0
0
10
20
30
40
50
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 65472
S09-2114-Rev. A, 12-Oct-09
www.vishay.com
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